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Prospects for dielectric constant reduction in integrated circuits interconnects

Published online by Cambridge University Press:  19 June 2014

Maxime Darnon,
Nicolas Posseme,
Thierry Chevolleau and
Thibaut L. David
Maxime Darnon
Affiliation:
Univ. Grenoble Alpes, LTM, F-38042 Grenoble-FRANCECNRS, LTM, F-38042 Grenoble-FRANCECEA-Leti-Minatec, LTM, F-38054 Grenoble-FRANCE
Nicolas Posseme
Affiliation:
CEA-Leti-Minatec, F-38054 Grenoble-FRANCE
Thierry Chevolleau
Affiliation:
Univ. Grenoble Alpes, LTM, F-38042 Grenoble-FRANCECNRS, LTM, F-38042 Grenoble-FRANCECEA-Leti-Minatec, LTM, F-38054 Grenoble-FRANCE
Thibaut L. David
Affiliation:
CEA-Leti-Minatec, F-38054 Grenoble-FRANCE
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Abstract

To improve the integrated circuits’ performance and continue the downscaling of dimensions, it is necessary to use low dielectric constant materials as interconnects insulators. Current porous SiCOH low-k dielectrics are now reaching their limits since their porosity enables the diffusion of species that modify the inner surface of the pores. To further reduce the dielectric constant, it is necessary to change paradigm in interconnects fabrication. In this paper, we discuss the most promising innovations in terms of process, materials and architectures to reduce the interconnects insulators dielectric constant.

Keywords

dielectricporosityreactive ion etching

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