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Pulsed Electron Beam Processing of Silicon Devices

Published online by Cambridge University Press:  15 February 2011

A. C. Greenwald,
R. P. Dolan and
S. P. Tobin
A. C. Greenwald
Affiliation:
Spire Corporation, Bedford, MA 01730 USA
R. P. Dolan
Affiliation:
Spire Corporation, Bedford, MA 01730 USA
S. P. Tobin
Affiliation:
Spire Corporation, Bedford, MA 01730 USA
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Abstract

Pulsed electron beams [1] were used to anneal ion-implanted diodes, transistors, and resistors. Devices were fabricated by patterning a thermal oxide on a silicon wafer, ion-implanting and pulse processing with the oxide in place, and then applying contacts. Oxide films over 0.3 micron thick were not damaged, and the silicon below these films was not melted by the pulsed electron beam. Low-dose (101311B+/cm2), implanted, pulse-annealed resistors showed no change in sheet resistance for oxide windows 2.5 to 50.0 microns wide. Diodes were fashioned with good forward and reverse I-V characteristics, with m=1.09 and IO=2.7×10−10 A/cm2 for I=IO exp(qV.mkT)−1 , when a low-temperature (550˚C, 1 hr), postpulse anneal was included in the process sequence. Both bipolar and FET types of transistors were fabricated. Results compare favorably with thermal annealing cycles.

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References

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