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PZT Electro-Optic Waveguide Devices Fabricated by Solid-Phase Epitaxy

Published online by Cambridge University Press:  10 February 2011

Keiichi Nashimoto,
Shigetoshi Nakamura,
Hiroaki Moriyama,
Masao Watanabe and
Eisuke Osakabe
Keiichi Nashimoto*
Affiliation:
Optical Devices Laboratory, Fuji Xerox Co. Ltd., Kanagawa, Japan
Shigetoshi Nakamura
Affiliation:
Optical Devices Laboratory, Fuji Xerox Co. Ltd., Kanagawa, Japan
Hiroaki Moriyama
Affiliation:
Optical Devices Laboratory, Fuji Xerox Co. Ltd., Kanagawa, Japan
Masao Watanabe
Affiliation:
Optical Devices Laboratory, Fuji Xerox Co. Ltd., Kanagawa, Japan
Eisuke Osakabe
Affiliation:
Optical Devices Laboratory, Fuji Xerox Co. Ltd., Kanagawa, Japan
*
* knashi@crl.fujixerox.co.jp
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Abstract

High quality epitaxial PZT optical waveguides have been grown by solid-phase epitaxy based on metal alkoxide solution process. Optical propagation loss was 4 dB/cm in epitaxial PZT thin film optical waveguides grown on SrTiO3 substrates. Epitaxial PZT optical waveguides were grown on Nb doped conductive SrTiO3 substrates, since considerable reduction in drive voltage will be expected when top electrode / optical waveguide / conductive substrate structures are realized. Propagation loss was relatively large, as compared with the structure using non-dope insulative substrates. Preliminary electrooptic deflection devices were fabricated by preparing prism electrodes on the surface of the PZT optical waveguides. Efficient deflection/switching of coupled laser beam in the PZT optical waveguides as large as 26 mrad was observed by applying 70 volts between prism electrode and Nb doped SrTiO3 substrates.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 493: Symposium U – Ferroelectric Thin Film VI , 1997, 383
Copyright
Copyright © Materials Research Society 1998

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References

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