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Qualitative Physics of Defects in Quantum Wells: Interface Roughness

Published online by Cambridge University Press:  25 February 2011

Harold P. Hjalmarson*
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185.
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Abstract

The electronic properties of interface roughness in a quantum well are described. Interface roughness is shown to always produce localized bound states. Thus intrinsic roughness can explain the giant oscillator strength observed for “free” excitons in quantum wells.

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