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A Quantitative Analysis of Cermet Resistivity Data Using the General Effective Media (GEM) Equation

Published online by Cambridge University Press:  28 February 2011

David S. Mclachlan
David S. Mclachlan*
Affiliation:
Physics Department, University of the Witwatersrand, P O Wits 2050, Johannesburg, South Africa
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Abstract

A General Effective Media (GEM) equation is used to quantitatively describe the resistivity of the W - Al203 and Ni - Si02 cermet systems as a function of the relative volume fractions. The two percolation morphology parameters (øc and t) characterise the microstructure. A constant resistivity pl is assumed for the metal (W or Ni) while, in some cases, it is necessary that the resistivity of the insulator be modeled as the tunneling of electrons, through an oxide barrier, from a thermally excited charged grain to a neutral grain.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 195: Symposium S – Physical Phenomena in Granular Materials , 1990, 199
Copyright
Copyright © Materials Research Society 1990

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References

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