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Quantitative Two-Dimensional Carrier Mapping in Silicon Nanowire-Based Tunnel-Field Effect Transistors Using Scanning Spreading Resistance Microscopy

Published online by Cambridge University Press:  01 February 2011

Andreas Schulze,
Thomas Hantschel,
Pierre Eyben,
Anne Vandooren,
Rita Rooyackers,
Jay Mody,
Anne Verhulst and
Wilfried Vandervorst
Andreas Schulze
Affiliation:
andreas.schulze@imec.be, IMEC, MCA, Leuven, Belgium
Thomas Hantschel
Affiliation:
thomas.hantschel@imec.be, IMEC, Kapeldreef 75, Leuven, B-3001, Belgium
Pierre Eyben
Affiliation:
pierre.eyben@imec.be, IMEC, MCA, Leuven, Belgium
Anne Vandooren
Affiliation:
anne.vandooren@imec.be, United States
Rita Rooyackers
Affiliation:
rita.rooyackers@imec.be, IMEC, Leuven, Belgium
Jay Mody
Affiliation:
Jay.Mody@imec.be, IMEC, MCA, Leuven, Belgium
Anne Verhulst
Affiliation:
anne.verhulst@imec.be, IMEC, Kapeldreef 75, Leuven, B-3001, Belgium
Wilfried Vandervorst
Affiliation:
vdvorst@imec.be, IMEC, MCA, Leuven, Belgium
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Abstract

The successful implementation of silicon nanowire (NW)-based tunnel-field effect transistors (TFET) critically depends on gaining a clear insight into the quantitative carrier distribution inside such devices. Therefore, we have developed a method based on scanning spreading resistance microscopy (SSRM) which allows quantitative two-dimensional (2D) carrier profiling of fully integrated NW-based TFETs with 2 nm spatial resolution. The keys in our process are optimized NW cleaving and polishing steps, in-house fabricated diamond tips with ultra-high resolution, measurements in high-vacuum and a dedicated calibration procedure accounting for dopant dependant carrier mobilities.

Keywords

dopantnanostructurescanning probe microscopy (SPM)

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