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Quantum Interference Effect in Narrow n+-GaAs Wires

Published online by Cambridge University Press:  25 February 2011

Koji Ishibashi,
Koh Nagata,
Shuichi Ishida,
Kenji Gamo,
Yoshinobu Aoyagi,
Mitsuo Kawabe,
Kazuo Murase and
Susumu Namba
Koji Ishibashi
Affiliation:
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University, Toyonaka 560 Japan
Koh Nagata
Affiliation:
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University, Toyonaka 560 Japan
Shuichi Ishida
Affiliation:
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University, Toyonaka 560 JapanDepartment of Physics, Faculty of Science, Osaka University, Toyonaka 560, Japan
Kenji Gamo
Affiliation:
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University, Toyonaka 560 Japan
Yoshinobu Aoyagi
Affiliation:
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University, Toyonaka 560 JapanInstitute of Physical and Chemical Research, Wako, Saitama 351-01 Japan
Mitsuo Kawabe
Affiliation:
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University, Toyonaka 560 JapanInstitute of Materials Science, University of Tsukuba, Sakura-mura Ibaraki 305, Japan
Kazuo Murase
Affiliation:
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University, Toyonaka 560 JapanDepartment of Physics, Faculty of Science, Osaka University, Toyonaka 560, Japan
Susumu Namba
Affiliation:
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University, Toyonaka 560 Japan
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Abstract

Our experimental results about aperiodic magnetoconductance in narrow n+-GaAs wire are described. These wires are fabricated in an MOCVD grown n+-GaAs film by electron beam lithography and the dry etching technique. It is found that the aperiodic structure arises from the quantum interference which is important in small structures (<1in). The experimental results are compared to the recent theory.

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References

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