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Raman Scattering Study for Self-Organized Ge Quantum Dots Formed on Si Substrate

Published online by Cambridge University Press:  11 February 2011

T. R. Yang,
M. M. Dvoynenko,
Z. C. Feng,
I. Ferguson and
H. H. Cheng
T. R. Yang
Affiliation:
Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan, ROC.
M. M. Dvoynenko
Affiliation:
Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan, ROC.
Z. C. Feng
Affiliation:
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332–0250, USA.
I. Ferguson
Affiliation:
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332–0250, USA.
H. H. Cheng
Affiliation:
Center for Condensed Matter Science, National Taiwan University, Taipei 106, Taiwan, ROC.
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Abstract

A Raman scattering study for self-organized Ge dots on Si substrate is presented. Raman signals from the Ge islands and Si substrate have been separated, by means of difference Raman spectroscopy technique. The wetting layer thickness and strain were estimated from the line width and the position of the peak. The estimated wetting layer thickness values are comparative with the Ge dot height obtained from microscopy measurements. As explained, the strain is observed to decrease with an increase of the Ge island height and the wetting layer thickness.

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