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RBS/Channeling Characterization of Ba Implanted Mg

Published online by Cambridge University Press:  25 February 2011

R. C. Da Silva,
Th. Hauser,
A. A. Melo,
J. C. Soares,
M. F. Da Silva and
O. Meyer
R. C. Da Silva
Affiliation:
Departamento de Física, Instituto de Ciencias e Engenharia Nucleares, LNETI, E. N. 10, 2685 Sacavém, Portugal
Th. Hauser
Affiliation:
Kernforschungszentrum Karlsruhe, Institut für Nukleare Festkörperphysik, P.O. Box 3640, D-7500 Karlsruhe, Germany
A. A. Melo
Affiliation:
Centro de Fisica Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1699 Lisboa Codex, Portugal
J. C. Soares
Affiliation:
Centro de Fisica Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1699 Lisboa Codex, Portugal
M. F. Da Silva
Affiliation:
Departamento de Física, Instituto de Ciencias e Engenharia Nucleares, LNETI, E. N. 10, 2685 Sacavém, Portugal
O. Meyer
Affiliation:
Kernforschungszentrum Karlsruhe, Institut für Nukleare Festkörperphysik, P.O. Box 3640, D-7500 Karlsruhe, Germany
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Abstract

The behaviour of 300 keV Ba ions implanted at room temperature with doses between 1015 and 1017 cm−2 in Mg single crystal and foils was investigated. The results show that the Ba ions do not occupy substitutions sites in Mg, either after the implantation or the annealing treatments. However, pronounced migration of Ba to the surface is observed above 380 °C. The remaining fraction overlaps with the aa-implanted distribution and forms small precipitates. This behaviour is not correlated with the recovery of the Mg lattice which is already complete at about 250 °C. The surface segregation of Ba delays the evaporation of Mg to temperatures near the melting point.

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References

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