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Reactions at Solid Interfaces

Published online by Cambridge University Press:  25 February 2011

R. Sinclair,
D. H. Ko,
T. J. Konno and
T. P. Nolan
R. Sinclair
Affiliation:
Department of Materials Science & Engineering, Stanford University, Stanford, CA 94305
D. H. Ko
Affiliation:
Department of Materials Science & Engineering, Stanford University, Stanford, CA 94305
T. J. Konno
Affiliation:
Department of Materials Science & Engineering, Stanford University, Stanford, CA 94305
T. P. Nolan
Affiliation:
Department of Materials Science & Engineering, Stanford University, Stanford, CA 94305
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Abstract

This article discusses some of the changes which can occur at interfaces due to reaction or annealing. For chemically unstable interfaces, the atomic recombinations result in formation of new phases, which can even be amorphous in the initial stages. When no further chemical evolution takes place, physical rearrangement can have important consequences on the structure and properties. Examples are drawn from work on Ti-Si, Pt-GaAs, Ti-Si-O-N, Al-Si and TiSi2-Si.

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References

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