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Reactive Laser–Sputtering for Amorphous Silicon Films

Published online by Cambridge University Press:  15 February 2011

M. Hanabusa and
M. Suzuki
M. Hanabusa
Affiliation:
School of Electrical and Electronic Engineering, Toyohashi University of Technology, Tenpaku, Toyohashi, 440, Japan
M. Suzuki
Affiliation:
School of Electrical and Electronic Engineering, Toyohashi University of Technology, Tenpaku, Toyohashi, 440, Japan
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Abstract

Intense, Q-switched Nd:YAG laser pulses were used to vaporize a silicon target. The pulsed atomic vapor generated produces amorphous silicon films at unusually fast accumulation speeds of 106 Å/s. Despite this speed, reactive deposition is made possible simply by evaporating in a reactive gas atmosphere. For instance, hydrogenated films have been produced by evaporating in hydrogen. Atomic hydrogen generated by thermal decomposition at a laserirradiated target spot is responsible for hydrogenation. Dynamics of this laser-induced deposition have been studied by a spectroscopic technique.

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References

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