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Recent Progress in AlGaN/GaN Based Optoelectronic Devices

Published online by Cambridge University Press:  21 February 2011

M. A. Khan,
Q. Chen,
C. J. Sun,
J. W. Yang and
M. S. Shur
M. A. Khan
Affiliation:
APA Optics, APA inc., 2950 N. E. 84th Lane, Blaine, MN 55449, USA
Q. Chen
Affiliation:
APA Optics, APA inc., 2950 N. E. 84th Lane, Blaine, MN 55449, USA
C. J. Sun
Affiliation:
APA Optics, APA inc., 2950 N. E. 84th Lane, Blaine, MN 55449, USA
J. W. Yang
Affiliation:
APA Optics, APA inc., 2950 N. E. 84th Lane, Blaine, MN 55449, USA
M. S. Shur
Affiliation:
Department of Electrical Engineering, University of Virginia, Charlottesville, VA 22903
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Abstract

We review our recent results on GaN based optoelectronic devices, which include InGaN-AlGaN Light Emitting Diodes (LEDs), GaN photoconductive, Schottky barrier, and p-n junction ultraviolet detectors, and optoelectronic AlGaN-GaN Heterostructure Field Effect Transistors. GaN-based optoelectronic devices cover a wide spectral range and demonstrate visible blind operation. A high quality of the epitaxial layers, the recent development of high performance GaN-based heterostructure field effect transistors, and transparent substrates make this material system uniquely suited for optoelectronic integrated circuits operating in visible and ultraviolet range.

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References

REFERENCES

1 Khan, M. A., Van Hove, J. M., Kuznia, J. N. and Olson, D. T., "High Electron Mobility GaN/AlGaN Heterostructures grown by LPMOCVD," Appl. Phys. Lett. 58, 2408 (1991).Google Scholar
2 Khan, M. A., Kuznia, J. N., Van Hove, J. M., Pan, N., and Carter, J., "Observation of a two-dimensional electron gas in low pressure MOCVD deposited GaN/AlGaN heterojunctions," Appl. Phys. Lett., 60, 3027 (1992)Google Scholar
3 Khan, M. A., Chen, Q., Sun, C. J., Shur, M., and Gelmont, B., "Two-dimensional electron gas in GaN-AlGaN heterostructures deposited using trimethylamine-alane as the aluminum source in low pressure metalorganic chemical vapor deposition," Appl. Phys. Lett., Vol. 67 (10), 1429 (1995).Google Scholar
4 Shur, M. S., Gelmont, B., and Asif Khan, M., High Electron Mobility in Two Dimensional Electrons Gas in AlGaN/GaN Heterostructures, J. Electronic Materials, accepted for publicationGoogle Scholar
5 Khan, M. A., Chen, Q., Yang, J. W., Sun, C. J., Adesida, I., Ping, A. T., and Shur, M., Processing and characterization of GaN-AlGaN based electronic and optoelectronic devices, in Proceedings of International Semiconductor Device Research Symposium, Charlottesville, VA, Dec. 6–8, 1995, to be publishedGoogle Scholar
6 Khan, M. A., Kuznia, J. N., Olson, D. T., Van Hove, J. M., and Reitz, L., "High Responsivities photoconductive ultraviolet sensors based on insulating single crystal GaN layers," Appl. Phys. Lett., 60, 2917 (1992).Google Scholar
7 Asif Khan, M., Kuznia, J. N., Olson, D. T., Blasingame, M. and Bhattarai, A. R., "Schottky barrier photodetector based on Mg-doped p-type GaN films," Appl. Phys. Lett., 63, 2455 (1993).Google Scholar
8 Khan, M. A., Chen, Q., Skogman, R. A., and Kuznia, J. N., "Violet LED's using high temperature RTA annealed p-type GaN Layers," Appl. Phys. Lett., 66 (16), 2046 (1995).Google Scholar
9 Khan, M. A., Van Hove, J. M., Olson, D. T. and Kuznia, J. N., "Vertical cavity, room temperature stimulated emission from photopumped GaN films deposited over sapphire substrates using LPMOCVD," Appl. Phys. Lett., 58, 1515 (1991).Google Scholar
10 Asif Khan, M., Krishnankutty, S., Skogman, R. A., Kuznia, J. N., Olson, D. T. and George, T., "Vertical Cavity Stimulated Emission from Photo-pumped InGaN/GaN Heterojunctions at Room Temperature," Appl. Phys. Lett., July 1994 Google Scholar
11 Khan, M. A., Shur, M. S., Chen, Q., Kuznia, J. N., and Sun, C. J., Electronics Letters, 31, 398(1995)Google Scholar
12 Khan, M. A., Shur, M. S., Chen, Q. C., and Kuznia, J. N., Electronics Letters, 30, 2175 (1994)Google Scholar