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Recent Progress on GaN HEMTs

Published online by Cambridge University Press:  01 February 2011

Shigeru Nakajima,
Yasunori Tateno and
Seigo Sano
Shigeru Nakajima
Affiliation:
sh.nakajima@eudyna.com, Eudyna Devices Inc., Yokohama, Japan
Yasunori Tateno
Affiliation:
y.tateno@eudyna.com, Eudyna Devices Inc., Koufu, Japan
Seigo Sano
Affiliation:
s.sano@eudyna.com, Eudyna Devices Inc., Yokohama, Japan
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Abstract

This paper is overviewed the recent progress on GaN HEMTs. High power, high frequency and high efficiency performance are reported. In addition, the results about long-term reliabilities and good manufacturability demonstrate that GaN HEMTs are ready for mass production.

Keywords

III-Vmicroelectronicssemiconducting

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References

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