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Relation Between Temperature and Solidification Velocity inRapidly Cooled Liquid Silicon

Published online by Cambridge University Press:  25 February 2011

M. O. Thompson,
P. H. Bucksbaum and
J. Bokor
M. O. Thompson
Affiliation:
Cornell University, Ithaca, NY 14853
P. H. Bucksbaum
Affiliation:
AT&T Bell Laboratories, Murray Hill,NJ 07974
J. Bokor
Affiliation:
AT&T Bell Laboratories, Holmdel, NY 07733
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Abstract

A semi-empirical method to determine the undercooling-velocity relationshipfor laser induced melting is presented. The technique uses measurements ofmelt depth versus time to control numerical simulations, resulting in a mapof the interface temperature as a function of time, and consequently as afunction of the interface velocity. The results are independent of any modelfor the velocity-undercooling relationship. Results of the technique onsimulated and experimental melt depth data are presented. Transientconductance data on 28 nanosecond 694 nm laser irradiation of siliconindicate an undercooling-velocity slope of 17±3 K/(m/sec) near the meltingpoint. Picosecond optical transmission data show a much smaller slope.

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References

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