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Scaling Challenges for NAND and Replacement Memory Technology

Published online by Cambridge University Press:  08 July 2011

Kirk Prall
Kirk Prall*
Affiliation:
Micron Technology, 8000 S. Federal Way, Boise, ID 83716 kprall@micron.com
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Abstract

Planar NAND technology is rapidly approaching its fundamental limits and will likely transition to a three dimensional structure. The scaling challenges facing NAND will be reviewed. Emerging memory technologies, such as the cross-point, will be discussed. The materials challenges facing emerging memories will be reviewed.

Keywords

memorynanoscalesemiconducting

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References

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