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Scanning Spreading Resistance Microscopy For 3D-Carrier Profiling in FinFET-based Structures

Published online by Cambridge University Press:  01 February 2011

Jay Mody,
Pierre Eyben,
Wouter Polspoel,
Malgorzata Jurczak and
Wilfried Vandervorst
Jay Mody
Affiliation:
jamody@imec.be, Katholieke Universiteit Leuven, Electrical Engineering Department, INSYS, Kasteelpark Arenberg 10,, Leuven, B-3001, Belgium
Pierre Eyben
Affiliation:
eyben@imec.be, IMEC vzw, Kapeldreef 75, Leuven, B-3001, Belgium
Wouter Polspoel
Affiliation:
wpolspoe@imec.be, Katholieke Universiteit Leuven, Electrical Engineering Department, INSYS, Kasteelpark Arenberg 10,, Leuven, B-3001, Belgium
Malgorzata Jurczak
Affiliation:
Malgorzata.Jurczak@imec.be, IMEC vzw, Kapeldreef 75,, Leuven, B-3001, Belgium
Wilfried Vandervorst
Affiliation:
vdvorst@imec.be, Katholieke Universiteit Leuven, Electrical Engineering Department, INSYS, Kasteelpark Arenberg 10,, Leuven, B-3001, Belgium
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Abstract

Junction formation in FinFET-based 3D-devices is a challenging problem as one targets a complete conformal doping of the source/drain regions in order to produce equal gate-profile overlaps (and thus transistor behavior) on all sides of the fins. Due to the lack of predictive modeling for several of the doping strategies explored (plasma immersion, cluster implants, vapor phase deposition, etc…) it becomes difficult to correctly predict the performance of the devices and hence, accurate 3D-doping profile determination is desired. Although several dopant/carrier profiling methods exist with excellent one- or two-dimensional resolution and properties, there is an urgent need to extend these towards a quantitative three-dimensional geometry. In this work, we use scanning spreading resistance microscopy (SSRM) with dedicated FinFET test structure to obtain three-dimensional information from successive two-dimensional scanning spreading resistance maps. We also assess the validity of our methodology by comparing various sections along the fins which represent the variability due to the processing and measurement procedure.

Keywords

scanning probe microscopy (SPM)devicesactivation analysis

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1070: Symposium E – Doping Engineering for Front-End Processing , 2008, 1070-E01-11
Copyright
Copyright © Materials Research Society 2008

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References

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