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Screen Printable Doped Self-Aligned Metallization for Solar Cells

Published online by Cambridge University Press:  11 February 2011

Ernest A. Addo,
Ismat Shah,
Robert Opila,
Allen. M. Barnett,
Kevin Allison and
Oleg Sulima
Ernest A. Addo
Affiliation:
Department of Material Science and Engineering, University of Delaware, Newark, DE. 19716
Ismat Shah
Affiliation:
Department of Material Science and Engineering, University of Delaware, Newark, DE. 19716Department of Physics and Astronomy, University of Delaware, Newark, DE. 19716
Robert Opila
Affiliation:
Department of Material Science and Engineering, University of Delaware, Newark, DE. 19716
Allen. M. Barnett
Affiliation:
AstroPower Inc, Newark DE. 19716
Kevin Allison
Affiliation:
AstroPower Inc, Newark DE. 19716
Oleg Sulima
Affiliation:
AstroPower Inc, Newark DE. 19716
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Abstract

Alloyed metal contacts to <100> and <111> p-type silicon (Si) were investigated using doped self-aligning metallization techniques [1]. The contact allows the formation of a pn-junction and provides metallization for photovoltaic applications via thick film technology [2]. A formulated screen-printable thick film was annealed above Ag/Si eutectic temperature of 830°C. The annealing process resulted in a junction depth of 0.3–1.2 μm and improved adhesion by the reduction of native oxide layer through use of a wetting agent. The technique inhibits shunts (high conductivity paths through the solar cell pn-junction caused by excessive metallization penetration). The technique also reduces the interfacial resistance due to dissimilar materials in contact – a parasitic resistance that also limit solar cell performance. The use of metallic Mg as a wetting agent additive in the thick film silver matrix was explored. Studies were carried out on screen printable thick films and the reducing effects of Mg were investigated using both air and reducing atmosphere (H2) annealing furnaces. We observed a correlation between increased alloying with reduced series resistance.

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References

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