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Selective Copper Cvd on Diamond Surfaces Using Self-Assembled Monolayers

Published online by Cambridge University Press:  25 February 2011

Stephen J. Potochnik,
David S. Y. Hsu,
Jeffrey M. Calvert and
Pehr E. Pehrsson
Stephen J. Potochnik
Affiliation:
Gas/Surface Dynamics Section, Code 6174Center for Bio/Molecular Science and Engineering, Code 6900
David S. Y. Hsu
Affiliation:
Surface Chemistry Branch, Code 6170, Naval Research Laboratory, Washington, DC 20375-5320
Jeffrey M. Calvert
Affiliation:
Center for Bio/Molecular Science and Engineering, Code 6900
Pehr E. Pehrsson
Affiliation:
Gas/Surface Dynamics Section, Code 6174
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Abstract

Selective chemical vapor deposition (CVD) of conductive, adherent copper films was achieved on single-crystal and polycrystalline diamond substrates modified with a ligating aminosilane and a Pd-based catalyst. Only isolated copper particles deposited on hydrogenated or aminosilane-coated diamond substrates without Pd. The Pd catalyst enhanced selectivity by a factor of 103 to 104. Copper CVD was performed in a cold-walled chamber at 446-456 K and 8x10-3 Pa using hexafluoroacetylacetonate-Cu-trimethylvinylsilane in H2 (1:1). Surfaces were characterized with x-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). Patterned Cu features were formed by exposing the aminosilane films to patterned ultraviolet (193 nm) radiation prior to Pd-catalyst addition and Cu CVD.

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References

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