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Selectivity Mechanisms in Low Temperature (<950°C) Selective Silicon Epitaxy

Published online by Cambridge University Press:  25 February 2011

J.T. Fitch and
D.J. Denning
J.T. Fitch
Affiliation:
Motorola Inc., Advanced Products Research and Development Laboratory, MD-K10, 3501 Ed Bluestein Blvd., Austin, TX 78721
D.J. Denning
Affiliation:
Motorola Inc., Advanced Products Research and Development Laboratory, MD-K10, 3501 Ed Bluestein Blvd., Austin, TX 78721
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Abstract

Low temperature selective silicon epitaxy was studied over a range of process pressures and HCI flows using a SiH2Cl2/HCl/H2 based chemistry. Thermodynamic modelling was carried out with the aid of the SOLGAS program to investigate the effect of process pressure, HCI flow rate, and leaks on the distribution of gas phase species. Selectivity results are interpreted in terms of the defect microchemistry on SiO2 surfaces.

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