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Si implants into Preamorphised GaAs

Published online by Cambridge University Press:  28 February 2011

R. Gwilliam,
R.S. Deol,
R. Blunt and
B.J. Sealy
R. Gwilliam
Affiliation:
Department of Electronic & Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH England
R.S. Deol
Affiliation:
Department of Electronic & Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH England
R. Blunt
Affiliation:
Department of Electronic & Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH EnglandPlessey Research Caswell Limited, Towcester, Northants, England
B.J. Sealy
Affiliation:
Department of Electronic & Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH England
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Abstract

Dual implants of (P+ + Si+) through thin Si3N4, layers have been studied. The phosphorus dose has a marked effect on the electrical properties of 6 × 1012 Si+ cm−2. Optimum electrical activation occurred at a phosphorus dose well below that required to produce an amorphous layer and depended on whether a furnace or a rapid thermal anneal was performed. Good control over the tail of the electron concentration profile was obtained for doses of phosphorus in the range 6 × 1012 to 1 × 1014 ions cm−2.

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References

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