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SI3N4 Particle Removal Efficiency Study

Published online by Cambridge University Press:  10 February 2011

Jane Qian Liu,
Carolyn Lee,
Joseph M. Rosamilia,
Tom Boone,
Veronica Czitrom and
Gregg S. Higashi
Jane Qian Liu
Affiliation:
Lucent Technologies, Bell Laboratories, 9333 South John Young Parkway, Orlando, FL 32819
Carolyn Lee
Affiliation:
Rice University, Houston, TX
Joseph M. Rosamilia
Affiliation:
Lucent Technologies, Bell Laboratories, 600 Montain Avenue, Murray Hill, NJ 07974
Tom Boone
Affiliation:
Lucent Technologies, Bell Laboratories, 600 Montain Avenue, Murray Hill, NJ 07974
Veronica Czitrom
Affiliation:
Lucent Technologies, Bell Laboratories, 9333 South John Young Parkway, Orlando, FL 32819
Gregg S. Higashi
Affiliation:
Lucent Technologies, Bell Laboratories, 9333 South John Young Parkway, Orlando, FL 32819
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Abstract

Controlling particle contamination in wafer cleaning is important to reduce defect density and improve device performance and yield. In this study, a screening experiment was employed to evaluate particle removal efficiency among different cleanings, including FSI BCLN, bench rinse and dry only, bench SC1/megasonic only, bench RCA cleaning, and bench RCA-based cleaning. To optimize particle removal efficiency in RCA-based cleaning, a design of experiment (DOE) has been done to investigate the impact of SC1/megasonic cleaning on Si3N4 particle removal efficiency. Bath temperature, megasonic power, and solution chemistry of SCI bath were evaluated. The removal efficiency in relations to particle sizes was also investigated

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 477 , 1997, 27
Copyright
Copyright © Materials Research Society 1997

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References

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