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SiC-Based Power Converters

Published online by Cambridge University Press:  01 February 2011

Leon Tolbert,
Hui Zhang,
Burak Ozpineci and
Madhu S. Chinthavali
Leon Tolbert
Affiliation:
tolbert@utk.edu, The University of Tennessee, Electrical Engineering and Computer Science, 414 Ferris Hall, Knoxville, TN, 37996-2100, United States, 865-974-2881, 865-974-5483
Hui Zhang
Affiliation:
hzhang18@utk.edu, The University of Tennessee, Electrical Engineering and Computer Science, 414 Ferris Hall, Knoxville, TN, 37996-2100, United States
Burak Ozpineci
Affiliation:
ozpinecib@ornl.gov, Oak Ridge National Laboratory, Power Electronics and Electric Machinery Research Center, 2360 Cherahala Blvd., Knoxville, TN, 37932, United States
Madhu S. Chinthavali
Affiliation:
chinthavalim@ornl.gov, Oak Ridge National Laboratory, Power Electronics and Electric Machinery Research Center, 2360 Cherahala Blvd., Knoxville, TN, 37932, United States
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Abstract

The advantages that silicon carbide (SiC) based power electronic devices offer are being realized by using prototype or experimental devices in many different power applications ranging from medium voltage to high voltage or for high temperature or high switching frequency applications. The main advantages of using SiC-based devices are reduced thermal management requirements and smaller passive components which result in higher power density. An overview of the SiC research effort at Oak Ridge National Laboratory (ORNL) and The University of Tennessee (UT) is presented in this paper.

Keywords

deviceselectrical propertiessimulation

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References

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