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Silicide Technology in Deep Submicron Regime

Published online by Cambridge University Press:  10 February 2011

K Suguro,
T. Iinuma,
K Ohuchi,
K. Miyashita,
H. Akutsu,
H. Yoshimura,
Y. Akasaka,
K Nakajima,
K Miyano and
Y. Toyoshima
K Suguro
Affiliation:
ULSI Process Eng. Lab., Microelectronics Eng. Lab., TOSHIBA Corporation 8, Shinsugita-cho, Isogo-ku, Yokohama 235, Japan, +81-45-770-3663, +81-45-770-3577, suguro@amc.toshiba.co.jp
T. Iinuma
Affiliation:
ULSI Process Eng. Lab., Microelectronics Eng. Lab., TOSHIBA Corporation 8, Shinsugita-cho, Isogo-ku, Yokohama 235, Japan, +81-45-770-3663, +81-45-770-3577, suguro@amc.toshiba.co.jp
K Ohuchi
Affiliation:
ULSI Device Eng. Lab., Microelectronics Eng. Lab., TOSHIBA Corporation 8, Shinsugita-cho, Isogo-ku, Yokohama 235, Japan, +81-45-770-3663, +81-45-770-3577
K. Miyashita
Affiliation:
ULSI Device Eng. Lab., Microelectronics Eng. Lab., TOSHIBA Corporation 8, Shinsugita-cho, Isogo-ku, Yokohama 235, Japan, +81-45-770-3663, +81-45-770-3577
H. Akutsu
Affiliation:
ULSI Process Eng. Lab., Microelectronics Eng. Lab., TOSHIBA Corporation 8, Shinsugita-cho, Isogo-ku, Yokohama 235, Japan, +81-45-770-3663, +81-45-770-3577, suguro@amc.toshiba.co.jp
H. Yoshimura
Affiliation:
ULSI Device Eng. Lab., Microelectronics Eng. Lab., TOSHIBA Corporation 8, Shinsugita-cho, Isogo-ku, Yokohama 235, Japan, +81-45-770-3663, +81-45-770-3577
Y. Akasaka
Affiliation:
ULSI Process Eng. Lab., Microelectronics Eng. Lab., TOSHIBA Corporation 8, Shinsugita-cho, Isogo-ku, Yokohama 235, Japan, +81-45-770-3663, +81-45-770-3577, suguro@amc.toshiba.co.jp
K Nakajima
Affiliation:
ULSI Process Eng. Lab., Microelectronics Eng. Lab., TOSHIBA Corporation 8, Shinsugita-cho, Isogo-ku, Yokohama 235, Japan, +81-45-770-3663, +81-45-770-3577, suguro@amc.toshiba.co.jp
K Miyano
Affiliation:
ULSI Process Eng. Lab., Microelectronics Eng. Lab., TOSHIBA Corporation 8, Shinsugita-cho, Isogo-ku, Yokohama 235, Japan, +81-45-770-3663, +81-45-770-3577, suguro@amc.toshiba.co.jp
Y. Toyoshima
Affiliation:
ULSI Device Eng. Lab., Microelectronics Eng. Lab., TOSHIBA Corporation 8, Shinsugita-cho, Isogo-ku, Yokohama 235, Japan, +81-45-770-3663, +81-45-770-3577
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Abstract

Silicide technology using cobalt-titanium alloy has been developed for sub-quarter micron devices. Extremely flat and epitaxial CoSi2 films are successfully grown on a (100) Si substrate. Improved SALICIDE process is not influenced by native oxide on a Si surface. This technology will be very useful in deep sub-quarter micron devices.

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References

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