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Silicon Carbide Power Devices and Processing

Published online by Cambridge University Press:  01 February 2011

J.B. Casady,
J.R. Bonds,
W.A. Draper,
J.N. Merrett,
I. Sankin,
D. Seale and
M.S. Mazzola
J.B. Casady
Affiliation:
SiC Devices Group, Semi South Laboratories, Inc., One Research Blvd., Starkville, MS 39759, U.S.A.
J.R. Bonds
Affiliation:
SiC Devices Group, Semi South Laboratories, Inc., One Research Blvd., Starkville, MS 39759, U.S.A.
W.A. Draper
Affiliation:
SiC Devices Group, Semi South Laboratories, Inc., One Research Blvd., Starkville, MS 39759, U.S.A.
J.N. Merrett
Affiliation:
SiC Devices Group, Semi South Laboratories, Inc., One Research Blvd., Starkville, MS 39759, U.S.A.
I. Sankin
Affiliation:
SiC Devices Group, Semi South Laboratories, Inc., One Research Blvd., Starkville, MS 39759, U.S.A.
D. Seale
Affiliation:
ECE Department, Mississippi State University Mississippi State, MS 39762, U.S.A.
M.S. Mazzola
Affiliation:
ECE Department, Mississippi State University Mississippi State, MS 39762, U.S.A.
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Abstract

An overview of silicon carbide (SiC) power device technology is given with an emphasis on processing issues and commercial applications. Schottky Barrier Diodes (SBDs) were the first to be made commercially available in 2001, with power switch and RF amplifiers soon to follow. This paper discusses the performance of current available rectifiers and published power switch development and identifies key issues in processing and device structures which have influenced past and will impact future SiC product development.

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