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Silicon Germanium Heterobipolar Transistor Structures with Extremely High Base Doping

Published online by Cambridge University Press:  22 February 2011

E. Kasper,
H. Kibbel and
U. König
E. Kasper
Affiliation:
Daimler-Benz AG Research Center Ulm, Wilhelm-Runge-Str. 11, D-7900 Ulm, Germany
H. Kibbel
Affiliation:
Daimler-Benz AG Research Center Ulm, Wilhelm-Runge-Str. 11, D-7900 Ulm, Germany
U. König
Affiliation:
Daimler-Benz AG Research Center Ulm, Wilhelm-Runge-Str. 11, D-7900 Ulm, Germany
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Abstract

The complete layer sequence of a SiGe-HBT including the emitter contact is grown by Si-MBE. The base doping level was increased from 1018/cm3 up to 1020/cm3 which resulted in very low intrinsic base sheet resistivities (0.27 kΩ/□ for a 50 nm base). With a base Ge content x = 32 % the highest current gain β=5000 could be obtained. A SiGe spacer between base and collector improved the DC-characteristics considerably.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991, 451
Copyright
Copyright © Materials Research Society 1991

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References

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