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SiO2/SiC Interface Properties on Various Surface Orientations

Published online by Cambridge University Press:  11 February 2011

Hiroshi Yano,
Taichi Hirao,
Tsunenobu Kimoto and
Hiroyuki Matsunami
Hiroshi Yano
Affiliation:
Graduate School of Materials Science, Nara Institute of Science and Technology, 8916–5 Takayama, Ikoma, Nara 630–0101, Japan.
Taichi Hirao
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Yoshidahonmachi, Sakyo, Kyoto 606–8501, Japan.
Tsunenobu Kimoto
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Yoshidahonmachi, Sakyo, Kyoto 606–8501, Japan.
Hiroyuki Matsunami
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Yoshidahonmachi, Sakyo, Kyoto 606–8501, Japan.
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Abstract

The interface properties of MOS capacitors and MOSFETs were characterized using the (0001), (1120), and (0338) faces of 4H-SiC. (0001) and (1120) correspond to (111) and (110) in cubic structure. (0338) is semi-equivalent to (100). The interface states near the conduction band edge are discussed based on the capacitance and conductance measurements of n-type MOS capacitors at a low temperature and room temperature. The (0338) face indicated the smallest interface state density near the conduction band edge and highest channel mobility in n-channel MOSFETs among these faces.

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References

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