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Sips adsorption model for DNA sensing with AlGaN/GaN high electron mobility transistors

Published online by Cambridge University Press:  13 February 2015

Espinosa Nayeli,
Schwarz U. Stefan,
Cimalla Volker and
Ambacher Oliver
Espinosa Nayeli
Affiliation:
Department of Microsystem Engineering-IMTEK, University of Freiburg, Georges-Koehler-Allee 103, 79110 Freiburg, GermanyFraunhofer Institute of Applied Solid State Physics, Tullastr. 72, 79108, Freiburg, Germany
Schwarz U. Stefan
Affiliation:
Department of Microsystem Engineering-IMTEK, University of Freiburg, Georges-Koehler-Allee 103, 79110 Freiburg, GermanyFraunhofer Institute of Applied Solid State Physics, Tullastr. 72, 79108, Freiburg, Germany
Cimalla Volker
Affiliation:
Fraunhofer Institute of Applied Solid State Physics, Tullastr. 72, 79108, Freiburg, Germany
Ambacher Oliver
Affiliation:
Department of Microsystem Engineering-IMTEK, University of Freiburg, Georges-Koehler-Allee 103, 79110 Freiburg, GermanyFraunhofer Institute of Applied Solid State Physics, Tullastr. 72, 79108, Freiburg, Germany
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Abstract

This work presents an adsorption model based on the Sips isotherm for sensing different concentrations of DNA with open gate AlGaN/GaN high electron mobility field effect transistors (HEMTs). Probe-DNA was immobilized on the transistor gate before the application of target-DNA. Concentrations of 10-15 to 10-6 mol/L were tested. The sensor has a detection limit of 10-12 mol/L and saturates after the addition of 10-8 mol/L target-DNA.

Keywords

adsorptionbiomedicalsensor

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Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1763: Symposium 2B – Materials for Biosensor Applications , 2015, IMRC2014-S2B-O003
Copyright
Copyright © Materials Research Society 2015 

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References

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