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Si/SiC UHV Direct Wafer Bonded Interface Structure

Published online by Cambridge University Press:  15 March 2011

M.J. Kim,
Hong Xu,
R.-J. Liu,
M.J. Cox and
R.W. Carpenter
M.J. Kim
Affiliation:
Science and Engineering of Materials Program, Center for Solid State Science, Arizona State University, Tempe, AZ 85287-170, U.S.A.
Hong Xu
Affiliation:
Science and Engineering of Materials Program, Center for Solid State Science, Arizona State University, Tempe, AZ 85287-170, U.S.A.
R.-J. Liu
Affiliation:
Science and Engineering of Materials Program, Center for Solid State Science, Arizona State University, Tempe, AZ 85287-170, U.S.A.
M.J. Cox
Affiliation:
Science and Engineering of Materials Program, Center for Solid State Science, Arizona State University, Tempe, AZ 85287-170, U.S.A.
R.W. Carpenter
Affiliation:
Science and Engineering of Materials Program, Center for Solid State Science, Arizona State University, Tempe, AZ 85287-170, U.S.A.
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Abstract

Planar (001)Si/(0001) Si-terminated 6H-SiC interfaces were synthesized by UHV diffusion bonding of cleaned, on-axis and vicinal wafers at 1100°C for 5 hours, at MPa pressure. The interfaces were crystalline up to their defining plane, without nanospectroscopically detectable impurities. The crack opening tests showed the interfaces were stronger than the Si substrates. Oxygen on the substrate surfaces resulted in silicon carbide on insulator (SiCOI) interface formation.

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