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Size Effects in Bi-Sb Solid Solutions Thin Films

Published online by Cambridge University Press:  14 March 2011

Elena I. Rogacheva,
Dar’ya S. Orlova,
Mildred S. Dresselhaus and
Shuang Tang
Elena I. Rogacheva
Affiliation:
National Technical University “Kharkov Polytechnic Institute”, 21 Frunze St., 61002, Kharkov, Ukraine
Dar’ya S. Orlova
Affiliation:
National Technical University “Kharkov Polytechnic Institute”, 21 Frunze St., 61002, Kharkov, Ukraine
Mildred S. Dresselhaus
Affiliation:
Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, MA 02139, USA
Shuang Tang
Affiliation:
Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, MA 02139, USA
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Abstract

The room-temperature dependences of the electrical conductivity σ, Seebeck coefficient S, Hall coefficient RH, and the thermoelectric power factor P on the thickness (d=10–300 nm) of the thin films grown on mica substrates by thermal evaporation in vacuum of Bi-Sb solid solutions crystals with 4.5 at.% Sb were obtained. It was established that an increase in d up to ~ 200 nm leads to a change in kinetic coefficients and that in the thickness dependences of the thermoelectric properties, quantum oscillations were observed. It was shown that the monotonic component of the σ(T) dependence can be satisfactorily approximated by theoretical calculations based on the classical Fuchs - Sondheimer theory. The theoretically estimated period of oscillations is in a good agreement with the experimentally observed period.

Keywords

electrical propertiesthermoelectricthin film

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