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Soi Technologies at the CNET

Published online by Cambridge University Press:  22 February 2011

Soi group
Soi group*
Affiliation:
Centre National d'Etudes des Télécommunications, BP. 98, 38243, Meylan-Cedex, France
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Abstract

For the recrystallization of poly-Si films deposited on oxidized Si wafers, we focus our research on lamp and cw laser systems. We have obtained large single-crystal films using both techniques. “Selective annealing” allows localization of the remaining defects in the recrystallized films. Crystallographic as well as electrical characterization confirm the device-worthy potential of this material.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983, 539
Copyright
Copyright © Materials Research Society 1984

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References

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