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SOI Waveguide Optical Nonreciprocal Devices with Directly Bonded Garnet

Published online by Cambridge University Press:  22 March 2011

Tetsuya Mizumoto and
Ryohei Takei
Tetsuya Mizumoto
Affiliation:
Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo, 152-8552, JAPAN
Ryohei Takei
Affiliation:
Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo, 152-8552, JAPAN
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Abstract

Surface activated direct bonding of a magnetooptic garnet crystal to a Silicon-On-Insulator (SOI) wafer is discussed for the application to waveguide optical nonreciprocal devices. An interferometric waveguide isolator is discussed that uses nonreciprocal phase shift brought about by a first-order magneto-optic effect. In an SOI waveguide, the low refractive index of buried oxide layer enhances the magneto-optic phase shift. This contributes to reduce the device size together with the strong field confinement of high index contrast waveguide. The interferometric isolator can be extended to an optical circulator by adopting appropriate 3-dB directional couplers to construct a Mach-Zehnder interferometer.

Keywords

optoelectronicmagnetoopticSi

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References

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