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Some Recent Developments in Industrial Ion Implanters

Published online by Cambridge University Press:  25 February 2011

Geoff Ryding*
Affiliation:
Eaton Corporation, Ion Beam Systems Division, Beverly, Massachusetts 01915, U.S.A.
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Abstract

semiconductor doping. This paper surveys some of the equipment developed at Eaton Corporation in response to the proliferation of ion implanted devices. Developments in both high current (~10mA) and medium current (~1mA) implanters will be discussed.

The evolution of dedicated equipment for the production of buried oxide layers (silicon on insulator technology) will also be reviewed.

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