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Sputtering Luminescent Ta2Zn3O8 Thin Films

Published online by Cambridge University Press:  10 February 2011

Philip D. Rack,
Michael D. Potter,
Andrew Woodard and
Santosh Kurinec
Philip D. Rack
Affiliation:
Advanced Vision Technologies, Inc., 150 Lucius Gordon Drive, Suite 215 West Henrietta, NY 14586, Email – pdrdav@jrit.edu
Michael D. Potter
Affiliation:
Advanced Vision Technologies, Inc., 150 Lucius Gordon Drive, Suite 215 West Henrietta, NY 14586, Email – pdrdav@jrit.edu
Andrew Woodard
Affiliation:
Microelectronic Engineering, Rochester Institute of Technology, Rochester, NY 14623
Santosh Kurinec
Affiliation:
Microelectronic Engineering, Rochester Institute of Technology, Rochester, NY 14623
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Abstract

Thin films have been deposited by rf magnetron sputtering from a stoichiometric Ta2Zn3O8 ceramic target (3ZnO + 1Ta2O5). Negative ion re-sputtering effects have been observed in the stoichiometric Ta2Zn3O8 target and have been attributed to O ion formation from primarily Ta-O bonds. Zinc deficient thin films were deposited as a result of the preferential re- sputtering of Zn versus Ta. The negative ion re-sputtering effects are exacerbated at higher powers and lower pressure. This observation is correlated to the oxygen ion transport through the dark space and the plasma, which ultimately controls the energy distribution of the oxygen particles that arrive at the substrate. To circumvent the negative ion re-sputtering, a mosaic ZnO-Ta target was sputtered, which resulted in stoichiometric and luminescent thin films.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 560: Symposium E – Luminescent Materials , 1999, 75
Copyright
Copyright © Materials Research Society 1999

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References

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