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A Steady-State Model for Coupled Defect Impurity Diffusion in Silicon

Published online by Cambridge University Press:  25 February 2011

F. F. Morehead and
R. F. Lever
F. F. Morehead
Affiliation:
IBM East Fishkill Facility, Hopewell Junction, New York 12533
R. F. Lever
Affiliation:
IBM East Fishkill Facility, Hopewell Junction, New York 12533
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Abstract

We extend our earlier model which was proposed to explain tails in the diffusion profiles of high concentration boron and phosphorus in silicon. Our quasi-steady-state approach is generalized here to include both vacancies (V) and interstitials (I) at equivalent levels. I-V recombination is regarded as near local equilibrium, occurring through reactions of the defects with defect-impurity pairs. This approach leads to the well-known plateau, kink and tail in high surface concentration P diffusions in Si and to the less well recognized tails in B as well. Our extended model, in its simplest form, allows a more complete and less restrictive treatment of Au diffusion in Si. An important advantage is the direct inclusion of these defect-impurity interactions and the resulting gradients in the defect concentrations.

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References

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