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Strain Mapping in InGaAsP Epitaxial Films by An X-Ray Diffraction Technique

Published online by Cambridge University Press:  26 February 2011

Jharna Chaudhuri,
William E. Mayo and
Sigmund Weissmann
Jharna Chaudhuri
Affiliation:
Mechanical Engineering Department, The Wichita State University, Wichita, KS 67208
William E. Mayo
Affiliation:
Department of Mechanics and Materials Science, College of Engineering, Rutgers, The State University of New Jersey, Piscataway, NJ 08854
Sigmund Weissmann
Affiliation:
Department of Mechanics and Materials Science, College of Engineering, Rutgers, The State University of New Jersey, Piscataway, NJ 08854
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Abstract

A new x-ray diffraction method is developed to determine the full elastic strain tensor and its distribution about a strain center in single crystal materials. It is based on the recently developed Computer Aided Rocking Curve Analyzer and is particularly well suited for analysis of thin film structures common to electronic materials. This technique will be described in detail, and its application in measuring the non-uniform strains in InGaAsP epitaxial film on InP substrate will be presented. Also, possibility of using this method to measure the uniformity of film thickness will be discussed.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985, 681
Copyright
Copyright © Materials Research Society 1986

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References

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