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Stress and Electromigration in Thin Film Metallisation

Published online by Cambridge University Press:  15 February 2011

C. A. Ross
C. A. Ross*
Affiliation:
Harvard University, Division of Applied Sciences, Cambridge, MA 02138
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Abstract

This paper reviews the experimentally established relationship between electromigration and mechanical stress in thin films. A model will be described which calculates the development of stress around sites of electromigration flux divergence in a metallisation track and it is shown how the model can be used to predict the time before electromigration damage occurs. The effect of passivation on the stress state within a metal track is discussed and the behaviour of metallisation under pulsed current testing is interpreted in terms of mechanical stress generation and relaxation.

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