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Stress Characterization of Sputtered PZT Films

Published online by Cambridge University Press:  10 February 2011

M. J. Mescher,
M. L. Reed and
T. E. Schlesinger
M. J. Mescher
Affiliation:
ECE Department, Carnegie Mellon University, Pittsburgh, PA 15213, ed@ece.cmu.edu
M. L. Reed
Affiliation:
ECE Department, Carnegie Mellon University, Pittsburgh, PA 15213, ed@ece.cmu.edu
T. E. Schlesinger
Affiliation:
ECE Department, Carnegie Mellon University, Pittsburgh, PA 15213, ed@ece.cmu.edu
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Abstract

In this work we show that stress in sputter deposited lead zirconate titanate (PZT) films can be controlled by variation of both deposition and annealing temperatures. These films were deposited via reactive rf magnetron sputtering using a Pb1.25Zr. 52Ti. 48 03 composite target and 02 as a reactive gas in an Ar ambient. Variation of stress as a function of deposition and annealing temperature was characterized. The deposited film composition was determined from x-ray fluorescence measurements. There is a strong correlation between film stress, composition, and crystallographic orientation. Stress was determined from the deflection of released SiO 2/Pt cantilever beams. We show that films with a wide range of intrinsic stress can be deposited which still exhibit good piezoelectric properties, making the fabrication of reliable thin film piezoelectric actuators possible.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 505 , 1997, 403
Copyright
Copyright © Materials Research Society 1998

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References

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