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Stress Relaxation in Al-Si-Cu Thin Films and Lines

Published online by Cambridge University Press:  21 February 2011

A. Witvrouw,
J. Proost,
B. Deweerdt,
Ph. Roussel and
K. Maex
A. Witvrouw
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
J. Proost
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
B. Deweerdt
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
Ph. Roussel
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
K. Maex
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
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Abstract

Substrate curvature measurements were used to study stress relaxation in Al-Si-Cu films at temperatures between 45 and 165 °C. Dislocation glide with an average activation energy, resp. athermal flow stress of 1.7 ± 0.2 eV, resp. 600 ± 200 MPa could describe the relaxation data for temperatures up to 120 °C well. Stress relaxation at 92 °C was found to progress much slower in 1 μm wide nitride passivated lines than in thin films or unpassivated lines.

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