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Structural Defects in Laser Annealed Arsenic Implanted Silicon

Published online by Cambridge University Press:  26 February 2011

J. M. Tonnerre,
M. Matsuura,
G. S. Cargill III and
L. W. Hobbs
J. M. Tonnerre
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Ileights, NY 10598
M. Matsuura
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Ileights, NY 10598
G. S. Cargill III
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Ileights, NY 10598
L. W. Hobbs
Affiliation:
MIT, Dept. of Materials Science and Engineering, Cambridge, MA 02139
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Abstract

Laser annealed arsenic implanted silicon specimens with doses ranging from 6×1015 to 7×1016 As/cm 2 have been investigated by transmission electron microscopy (TEM) and double crystal xray diffractometry (DCD). For the highest implant dose, laser powers ranging from 1.1 to 2.2 J/cm 2 have been used. Experimental observations show two new features for this kind of specimen. First, in some cases, TEM micrographs evidence small (˜50Å diameter) precipitate-like defects and/or dislocation loops confined within the heavily doped region. Second, in some cases, DCD shows a positive strain in addition to the negative strain attributed to 90% As in substitutional sites. X-ray rocking-curve simulations reveal that the negative strain drops to zero around 1000Å before the end of the As distribution. This might be related to the presence of Si interstitials in the deepest region of the As distribution.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 209: Symposium K – Defects in Materials , 1990, 505
Copyright
Copyright © Materials Research Society 1991

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References

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