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Structural Studies of Metal-Semiconductor Interfaces with High-Resolution Electron Microscopy

Published online by Cambridge University Press:  15 February 2011

J. M. Gibson,
R. T. Tung and
J. M. Poate
J. M. Gibson
Affiliation:
Bell Laboratories, 600 Mountain Avenue, Murray Hill NJ 07974
R. T. Tung
Affiliation:
Bell Laboratories, 600 Mountain Avenue, Murray Hill NJ 07974
J. M. Poate
Affiliation:
Bell Laboratories, 600 Mountain Avenue, Murray Hill NJ 07974
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Abstract

We have studied interface atomic structure in epitaxial cobalt and nickel disilicides on silicon using high-resolution transmission electron microscopy. By employing UHV techniques during deposition and reaction we have grown truly single-crystalline NiSi2 and CoSi2 films on (111) Si and in the former case on (100) Si. These films are shown to be continuous to below 10Å thickness. By close control over preparation conditions, afforded by UHV, we can greatly influence the nucleation and growth of these films to the extent, for example with NiSi2 on (111)Si, of yielding continuous single-crystal films with either of two orientations as desired. Whilst in the (111) NiSi2 on Si system the interfacial structure invariably appears to well-fit a model in which metal atoms nearest to the interface are 7-fold co-ordinated, for (111) CoSi2 on Si agreement is generally better with a model involving 5-fold co-ordination of these atoms. A misfit dislocation core is also imaged. Results are discussed in the light of silicide nucleation and growth. The structure and stability of the (100) NiSi2 on Si interface is also considered.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982, 395
Copyright
Copyright © Materials Research Society 1982

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References

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