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Structure-Property Correlation in Low K Dielectric Materials

Published online by Cambridge University Press:  10 February 2011

Michael Morgen,
Jie-Hua Zhao,
Michael Hay,
Taiheui Cho and
Paul S. Ho
Michael Morgen
Affiliation:
Institute for Materials Science, University of Texas at Austin, Austin TX 78712
Jie-Hua Zhao
Affiliation:
Institute for Materials Science, University of Texas at Austin, Austin TX 78712
Michael Hay
Affiliation:
Institute for Materials Science, University of Texas at Austin, Austin TX 78712
Taiheui Cho
Affiliation:
Institute for Materials Science, University of Texas at Austin, Austin TX 78712
Paul S. Ho
Affiliation:
Institute for Materials Science, University of Texas at Austin, Austin TX 78712
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Abstract

In recent years there have been widespread efforts to identify low dielectric constant materials that can satisfy a number of diverse performance requirements necessary for successful integration into IC devices. This has led to extensive efforts to develop low k materials and the associated process integration. A particularly difficult challenge for material development has been to find the combination of low dielectric constant and good thermal and mechanical stability. In this paper recent characterization results for low k materials performed at the University of Texas will be reviewed, with an emphasis on the relationship of chemical structure to the aforementioned key material properties. For example, measurements showing the effect of film porosity on dielectric constant and thermal and mechanical properties is presented. This data, as well as that for other material types, demonstrates the tradeoffs between dielectric constant and thermomechanical properties that are often made during the course of material development.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 565: Symposium O – Low-Dielectric Constant Materials V , 1999, 69
Copyright
Copyright © Materials Research Society 1999

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