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Study of depth-dependent radiation-induced defects using coherent acoustic phonon spectroscopy

Published online by Cambridge University Press:  20 September 2011

A. Steigerwald,
J. Gregory,
K. Varga,
A.B. Hmelo,
X. Liu,
J. K. Furdyna,
L. C. Feldman and
N. Tolk
A. Steigerwald
Affiliation:
Department of Physics and Astronomy, Vanderbilt University Nashville, TN, 37235
J. Gregory
Affiliation:
Department of Physics and Astronomy, Vanderbilt University Nashville, TN, 37235
K. Varga
Affiliation:
Department of Physics and Astronomy, Vanderbilt University Nashville, TN, 37235
A.B. Hmelo
Affiliation:
Department of Physics and Astronomy, Vanderbilt University Nashville, TN, 37235
X. Liu
Affiliation:
Department of Physics, University of Notre Dame, Notre Dame, Indiana, 46556
J. K. Furdyna
Affiliation:
Department of Physics, University of Notre Dame, Notre Dame, Indiana, 46556
L. C. Feldman
Affiliation:
Department of Physics and Astronomy, Vanderbilt University Nashville, TN, 37235Institute of Advanced Materials, Devices, and Nanotechnology, Rutgers University, New Brunswick, NJ, 08901
N. Tolk
Affiliation:
Department of Physics and Astronomy, Vanderbilt University Nashville, TN, 37235
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Abstract

Here we study the effect of radiation-induced point defect distributions on the optical reflectivity signal in GaAs using coherent acoustic phonon spectroscopy. We demonstrate that the presence of point defects significantly modifies the optical response, allowing estimation of the depth-dependent defect distribution in a nondestructive and noninvasive manner. We show that the observed changes are dependent on defect-induced changes to the electronic structure, namely defect-induced band tailing of the direct 1.43eV band edge. This provides a method for subsurface investigations on the complex interaction between different defects species and optoelectronic structure.

Keywords

acousticdefectselectronic structure

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References

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