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Study of Diamond Nucleation on Silicon Using Direct Negative Carbon Ion Beam Source

Published online by Cambridge University Press:  21 February 2011

Y.W. Ko,
Y.O. Ahn,
M.H. Sohn,
Y. Park and
S.I. Kim
Y.W. Ko
Affiliation:
Department of Physics and Engineering Physics, Stevens Institute of Technology, Hoboken, NJ 07030
Y.O. Ahn
Affiliation:
Department of Physics and Engineering Physics, Stevens Institute of Technology, Hoboken, NJ 07030
M.H. Sohn
Affiliation:
Department of Physics and Engineering Physics, Stevens Institute of Technology, Hoboken, NJ 07030
Y. Park
Affiliation:
Department of Physics and Engineering Physics, Stevens Institute of Technology, Hoboken, NJ 07030
S.I. Kim
Affiliation:
SKION Corporation, 612 River St. Hoboken, NJ 07030
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Abstract

The initial nucleation stages of sp3 bonded amorphous diamond on silicon substrates have been investigated. The energy of the incident carbon ions/atoms is understood as a key parameter for the vapor phase formation of amorphous diamond like carbon coatings. SKION's solid state carbon ion source is used for this study. The ion source is UHV compatible and capable of producing a controlled energy ion beam in the energy range of 5-300 eV. In the initial stage of the deposition, carbon is found to be deposited as a silicon carbide up to a thickness of about 180Á at room temperature. Silicon is diffused to the surface and forms SiC. As the energy of the ion beam increases, the formation of silicon carbide becomes apparent. Further carbon ion bombardment then leads to the formation of an sp3 bonded amorphous diamond film. Post-annealing above 900°C leads to the formation of crystalline silicon resulting in a Si-rich SiC surface due to silicon out-diffusion.

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References

1 Angus, J.C. and Hayman, C.C., Science 241, 913 (1988).Google Scholar
2 Spear, K.E., J.Amer.Ceram.Soc. 72(2), 171 (1989).Google Scholar
3 Niu, CM., Tsagaropoulos, G., and Baglio, J., J. Solid State Chem. 91, 47 (1991).Google Scholar
4 Miyazawa, T., Misawa, S., Yoshida, S., and Gonda, S., J. Appl. Phys, 55, 188 (1984).Google Scholar
5 Lifshitz, Y., Kasi, S.R., and Rabalais, J.W., Adv.Mater.Manu.Process. 3, 157 (1988).Google Scholar
6 Ishikawa, J., Surface and Coatings technology, 65, 64–70 (1994).Google Scholar
7 Ishikawa, J., Rev.Sci.Instnim. 63 (4). 2368 (1992).Google Scholar
8 Ishikawa, J. and Ogawa, K., Nucl. Instrum. and Meth. Res., B21. 205–208 (1987).Google Scholar
9 Kasi, S.R., Kang, H., and Rabalais, J.W., J.Chem.Phys. 88 (9), 5914 (1988).Google Scholar
10 Miyazawa, T., Misawa, S., Yoshida, S., and Gonda, S., J. Appl. Phys, 55, 188 (1984).Google Scholar
11 Lifshitz, Y., Kasi, S.R., and Rabalais, J.W., Adv.Mater.Manu.Process. 3, 157 (1988).Google Scholar
12 Aisenberg, S. and Chobot, R., J.Appl.Phys. 42, 2953 (1971).Google Scholar
13 Angus, J.C. and Hayman, C.C., Science 241, 913 (1988).Google Scholar
14 Ishikawa, J., Surface and Coatings Technology, 65, 64–70 (1994).Google Scholar
15 Ishikawa, J., Rev.Sci.Instrum. 63 (4). 2368 (1992).Google Scholar
16 Park, Y., KO, Y.W., Sohn, M.H., and Kim, S.I., presented at the 1995 Fall Meeting, Boston.Google Scholar
17 Hass, T.W., Grant, J.T., and Dooley, G.J. III, J.Appl.Phys. 43, 1853 (1972).Google Scholar
18 Lurie, P.G. and Wilson, J.M., Surf.Sci. 65, 476 (1977).Google Scholar