Hostname: page-component-7b7567c8c-tnzcf Total loading time: 0 Render date: 2026-11-13T21:20:34.013Z Has data issue: false hasContentIssue false
  • English
  • Français

A Study of Titanium Silicide Polycide Etching

Published online by Cambridge University Press:  25 February 2011

S. M. Bobbio,
Y. S. Ho and
T. Lopez
S. M. Bobbio
Affiliation:
Microelectronics Center of North Carolina P.O. Box 12889 Research Triangle Park, NC 27709
Y. S. Ho
Affiliation:
Microelectronics Center of North Carolina P.O. Box 12889 Research Triangle Park, NC 27709
T. Lopez
Affiliation:
Microelectronics Center of North Carolina P.O. Box 12889 Research Triangle Park, NC 27709
Get access

Abstract

The reactive ion etching of polycide films (TiSi2 over polysilicon) is discussed. Experimental conditions which lead to anisotropy and the identification of certain contamination problems as well as their solution are presented.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Ephrath, L.M. and Bennett, R.S., Proc. of the 1st International Symp. on VLSI Science and Tech., Electrochem. Soc., Pennington, NJ, 108 (1982).Google Scholar
2. Appled Materials Corporation, 3050 Bowers Ave., Santa Clara, CA 95054.Google Scholar
3. Ho, Y. S., Bobbio, S.M., Jones, S.K., Chapman, R., and Lopez, T., Paper K3-5 of this symposium.Google Scholar
4. Brat, T., Osburn, C.M., Finsted, T., Liu, J., and Ellington, B., J. Electrochem. Soc., 133, 1481 (1986).Google Scholar
5. Leiter, K. and Mark, T.D., Proc. 7th International Symp. on Plasma Chemistry, Eindhoven (1985).Google Scholar