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Study on Dipole Layer Formation between Two Oxides : Experimental Evidences and Possible Models

Published online by Cambridge University Press:  21 November 2011

Koji Kita and
Akira Toriumi
Koji Kita
Affiliation:
Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Akira Toriumi
Affiliation:
Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Abstract

Hetero-interface between two oxides sometimes forms a dipole layer which is experimentally observable macroscopically, as an electric potential barrier at the interface. Investigation of the flatband voltage shift of the metal-insulator-semiconductor capacitors with bilayer oxides as the insulator is suitable to characterize the dipole formation at the interface of two oxides. A model to explain the driving force to form the dipole is discussed by taking account of the areal density difference of oxygen atoms at the interface, which should be a guideline to predict both the direction and magnitude of the interface dipoles. Based on this model the requirement for the oxides to form the dipoles is also discussed.

Keywords

devicesdielectricoxide

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1331: Symposium K – Frontiers of Solid-State Ionics , 2011, mrss11-1331-k04-01
Copyright
Copyright © Materials Research Society 2011

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References

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