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Sub-Quarter Micron Metallization Using Ionized Metal Plasma Technology

Published online by Cambridge University Press:  10 February 2011

Fusen Chen,
Zheng Xu and
Ashok Sinha
Fusen Chen
Affiliation:
Applied Materials, Inc. 3050 Bowers Avenue, Santa Clara, CA 95054
Zheng Xu
Affiliation:
Applied Materials, Inc. 3050 Bowers Avenue, Santa Clara, CA 95054
Ashok Sinha
Affiliation:
Applied Materials, Inc. 3050 Bowers Avenue, Santa Clara, CA 95054
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Abstract

Ionized Metal Plasma (IMP) technology has been developed for liners and wetting layer deposition of sub-quarter-micron devices. Numerical modeling showed the unique advantages of IMP source over ECR source and long throw sputtering in enhancing bottom coverage. Ti and TiN bottom coverage up to 70% were demonstrated on 0.18μm contact holes. The deposition rate, uniformity, bottom coverage and film stress were optimized by tuning RF and DC powers, process pressure and bias power. In situ TiSi2 were formed in high aspect ratio contacts by depositing IMP Ti at an elevated temperature. The precisely controlled microstructure of IMP TiN film enabled low temperature aluminum planarization. The extendibility to 0.13μm technology node was demonstrated, and the application in copper metallization was revealed.

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