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Sulfur Segregation in Ion-Implanted and RTA'd Silicon

Published online by Cambridge University Press:  28 February 2011

R. A. Herring and
H. M. Clearfield
R. A. Herring
Affiliation:
Martin Marietta Laboratories 1450 S. Rolling Road Baltimore, MD 21227
H. M. Clearfield
Affiliation:
Martin Marietta Laboratories 1450 S. Rolling Road Baltimore, MD 21227
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Abstract

The segregation of 6 Mev S-implanted Si during RTA between 700 and 1200 °C has been closely studied. A model has been proposed in which self-interstitial atoms induce S to segregate into the bulk Si at ∼700°C and vacancies induce S to segregate towards the implanted surface at the higher temperatures. The binding energy between the SIA and S has been measured to be ∼0.5 eV.

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