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Supersaturated Substitutional Solid Solution after Solid Phase Epitaxial Regrowth by Incoherent Light Scanning.

Published online by Cambridge University Press:  15 February 2011

L. Pedulli and
L. Correra
L. Pedulli
Affiliation:
Istituto Lamel-C.N.R. Via dei Castagnoli 1, 40126 Bologna, Italy.
L. Correra
Affiliation:
Istituto Lamel-C.N.R. Via dei Castagnoli 1, 40126 Bologna, Italy.
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Abstract

Supersaturated substitutional solid solutions of 2×101531P+ /cm2 implanted at 10 keV in (100) Silicon were obtained after solid phase epitaxial regrowth using a scanning beam of incoherent light. The main results are: a) the maximum P+ concentration exceeds of about 5 times the maximum solid solubility at the temperature reached by the sample; b) the carrier concentration profile shows a complete dopant activation without diffusion of the implanted ions; c) an improvement of minority carriers diffusion length in the bulk is often observed; d) the values of carrier mobilities are similar to those obtained after liquid phase regrowth by pulsed ruby laser; e) a very good recovery of the damage is obtained: Rutherford backscattering spectra show that the dechanneling fraction is very close to the value of virgin samples and Trasmission Electron Microscopy analysis shows that the residual damage consists of dislocation loops of about 30 Å diameter confined in a region at about 500 Å depth.

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