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Surface and Reactor Effects on Selective Copper Deposition from Cu(hfac)tmvs

Published online by Cambridge University Press:  22 February 2011

John A. T. Norman,
David A. Roberts and
Arthur K. Hochberg
John A. T. Norman
Affiliation:
Schumacher, 1969 Palomar Oaks Way, Carlsbad, CA 92002
David A. Roberts
Affiliation:
Schumacher, 1969 Palomar Oaks Way, Carlsbad, CA 92002
Arthur K. Hochberg
Affiliation:
Schumacher, 1969 Palomar Oaks Way, Carlsbad, CA 92002
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Abstract

The selectivity of OMCVD copper films grown at 160°C/500 mTorr from the volatile liquid precursor Cu(hfac)tmvs was evaluated for various commercial 6” wafers patterned with either TiN/SiO2 or TiN/Si3N4. By processing wafers “as received”, only thermal grown SiO2 consistently resisted metallization, allowing copper films up to 1.5μ thick to be grown on TiN. For SiO2, films containing H2O, especially from PECVD, only blanket deposition was observed. However, by a utilizing simple thermal predeposition dehydration some of these SiO2 films were conditioned to give selective deposition.

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