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Surface Temperatures Produced In Silicon Using Large Diameter Scanning Cw Sources

Published online by Cambridge University Press:  15 February 2011

J. F. Gibbons,
L. A. Christel and
A. Lietoila
J. F. Gibbons
Affiliation:
Stanford Electronics Laboratories, Stanford, California 94305
L. A. Christel
Affiliation:
Stanford Electronics Laboratories, Stanford, California 94305
A. Lietoila
Affiliation:
Stanford Electronics Laboratories, Stanford, California 94305
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Abstract

The temperature induced at the surface of a silicon wafer is calculated for both circular and rectangular scanning beams, assuming both a thermally isolated and heat sunk back surface. In the former case, the problem is one of simple uniform heating with radiative cooling at slow scan speeds. A significant thermal gradient is produced across the wafer at high scan speeds. In the latter case, a one-dimensional analysis suffices except for beam diameters less than about twice the wafer thickness, when lateral heat diffusion effects are present.

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References

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